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Creators/Authors contains: "Hawkins, Samuel_D"

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  1. ; ; ; ; ; ; ; (, Applied Physics Express)
    Abstract The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgapp-GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap. Electrical measurements show that the average sheet resistance of the implanted layer increases only by an order of magnitude from its pre-implantation value at a proton dose of ∼1013cm−2followed by 200 °C annealing. It is also shown that annealing reduces the implantation-induced optical absorption while still retaining a high electrical resistivity. 
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  2. ; ; ; ; ; ; ; ; ; ; et al (, Nano Letters)